thermal: exynos: remove parsing of samsung,tmu_gain property

Since pdata gain values are SoC (not platform) specific just move
it from platform data to struct exynos_tmu_data instance. Then
remove parsing of samsung,tmu_gain property.

There should be no functional changes caused by this patch.

Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>
Reviewed-by: Daniel Lezcano <daniel.lezcano@linaro.org>
Signed-off-by: Eduardo Valentin <edubezval@gmail.com>

diff --git a/drivers/thermal/samsung/exynos_tmu.c b/drivers/thermal/samsung/exynos_tmu.c
index 6db6ef6..3cdbc09 100644 (file)
--- a/drivers/thermal/samsung/exynos_tmu.c
+++ b/drivers/thermal/samsung/exynos_tmu.c
@@ -192,6 +192,8 @@
  * @max_efuse_value: maximum valid trimming data
  * @temp_error1: fused value of the first point trim.
  * @temp_error2: fused value of the second point trim.
+ * @gain: gain of amplifier in the positive-TC generator block
+ *     0 < gain <= 15
  * @reference_voltage: reference voltage of amplifier
  *     in the positive-TC generator block
  *     0 < reference_voltage <= 31
@@ -219,6 +221,7 @@ struct exynos_tmu_data {
        u32 min_efuse_value;
        u32 max_efuse_value;
        u16 temp_error1, temp_error2;
+       u8 gain;
        u8 reference_voltage;
        struct regulator *regulator;
        struct thermal_zone_device *tzd;
@@ -368,8 +371,6 @@ static int exynos_tmu_initialize(struct platform_device *pdev)
 
 static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
 {
-       struct exynos_tmu_platform_data *pdata = data->pdata;
-
        if (data->soc == SOC_ARCH_EXYNOS4412 ||
            data->soc == SOC_ARCH_EXYNOS3250)
                con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);
@@ -378,7 +379,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
        con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
 
        con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
-       con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
+       con |= (data->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
 
        con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT);
        con |= (EXYNOS_NOISE_CANCEL_MODE << EXYNOS_TMU_TRIP_MODE_SHIFT);
@@ -1135,14 +1136,8 @@ MODULE_DEVICE_TABLE(of, exynos_tmu_match);
 static int exynos_of_sensor_conf(struct device_node *np,
                                 struct exynos_tmu_platform_data *pdata)
 {
-       u32 value;
-       int ret;
-
        of_node_get(np);
 
-       ret = of_property_read_u32(np, "samsung,tmu_gain", &value);
-       pdata->gain = (u8)value;
-
        of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);
 
        of_node_put(np);
@@ -1196,6 +1191,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
                data->tmu_read = exynos4210_tmu_read;
                data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
                data->ntrip = 4;
+               data->gain = 15;
                data->reference_voltage = 7;
                data->efuse_value = 55;
                data->min_efuse_value = 40;
@@ -1213,6 +1209,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
                data->tmu_set_emulation = exynos4412_tmu_set_emulation;
                data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
                data->ntrip = 4;
+               data->gain = 8;
                data->reference_voltage = 16;
                data->efuse_value = 55;
                if (data->soc != SOC_ARCH_EXYNOS5420 &&
@@ -1229,6 +1226,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
                data->tmu_set_emulation = exynos4412_tmu_set_emulation;
                data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
                data->ntrip = 8;
+               data->gain = 8;
                if (res.start == EXYNOS5433_G3D_BASE)
                        data->reference_voltage = 23;
                else
@@ -1244,6 +1242,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
                data->tmu_set_emulation = exynos5440_tmu_set_emulation;
                data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
                data->ntrip = 4;
+               data->gain = 5;
                data->reference_voltage = 16;
                data->efuse_value = 0x5d2d;
                data->min_efuse_value = 16;
@@ -1256,6 +1255,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
                data->tmu_set_emulation = exynos4412_tmu_set_emulation;
                data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
                data->ntrip = 8;
+               data->gain = 9;
                data->reference_voltage = 17;
                data->efuse_value = 75;
                data->min_efuse_value = 15;

diff --git a/drivers/thermal/samsung/exynos_tmu.h b/drivers/thermal/samsung/exynos_tmu.h
index 9f4318c..689453d 100644 (file)
--- a/drivers/thermal/samsung/exynos_tmu.h
+++ b/drivers/thermal/samsung/exynos_tmu.h
@@ -40,15 +40,11 @@ enum soc_type {
 
 /**
  * struct exynos_tmu_platform_data
- * @gain: gain of amplifier in the positive-TC generator block
- *     0 < gain <= 15
  * @cal_type: calibration type for temperature
  *
  * This structure is required for configuration of exynos_tmu driver.
  */
 struct exynos_tmu_platform_data {
-       u8 gain;
-
        u32 cal_type;
 };